Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy
文献类型：期刊论文
| 作者 | Chen CL; Chen NF(陈诺夫) ; Liu LF; Li YL; Wu JL
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 260期号:1-2页码:50-53 |
| 关键词 | X-Ray Diffraction Liquid Phase Epitaxy Semiconducting Ternary Compounds |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000187730000008 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33829]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Chen CL,Chen NF,Liu LF,et al. Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy[J]. Journal of Crystal Growth,2004,260(1-2):50-53. |
| APA | Chen CL,陈诺夫,Liu LF,Li YL,&Wu JL.(2004).Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy.Journal of Crystal Growth,260(1-2),50-53. |
| MLA | Chen CL,et al."Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy".Journal of Crystal Growth 260.1-2(2004):50-53. |
入库方式： OAI收割
来源：力学研究所
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