(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit
文献类型：期刊论文
| 作者 | Song SL; Chen NF(陈诺夫) ; Zhou JP; Li YL; Chai CL; Yang SY; Liu ZK
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 260期号:3-4页码:451-455 |
| 关键词 | Auger Electron Spectroscopy X-Ray Diffraction Ion-Beam Epitaxy Gadolinium Compounds Metal-Insulator-Transition Epitaxy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| 中文摘要 | (Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | METAL-INSULATOR-TRANSITION ; EPITAXY |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000187781300027 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33831]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Song SL,Chen NF,Zhou JP,et al. (Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit[J]. Journal of Crystal Growth,2004,260(3-4):451-455. |
| APA | Song SL.,陈诺夫.,Zhou JP.,Li YL.,Chai CL.,...&Liu ZK.(2004).(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit.Journal of Crystal Growth,260(3-4),451-455. |
| MLA | Song SL,et al."(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit".Journal of Crystal Growth 260.3-4(2004):451-455. |
入库方式： OAI收割
来源：力学研究所
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