Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals
文献类型：期刊论文
| 作者 | Chen QS(陈启生) ; Deng GY(邓谷雨); Ebadian A; Prasad V
|
| 刊名 | Journal of Rare Earths
 |
| 出版日期 | 2007 |
| 卷号 | 25页码:345-348 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | Czochralski Growth Flow Field Temperature Distributions Cusp Magnetic Field |
| ISSN号 | 1002-0721 |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China. |
| 中文摘要 | The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed. |
| 类目[WOS] | Chemistry, Applied |
| 研究领域[WOS] | Chemistry |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000207051600035 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33863]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Chen QS,Deng GY,Ebadian A,et al. Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals[J]. Journal of Rare Earths,2007,25:345-348. |
| APA | 陈启生,邓谷雨,Ebadian A,&Prasad V.(2007).Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals.Journal of Rare Earths,25,345-348. |
| MLA | 陈启生,et al."Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals".Journal of Rare Earths 25(2007):345-348. |
入库方式： OAI收割
来源：力学研究所
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