High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression
文献类型：期刊论文
| 作者 | Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng; Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 113页码:161107 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28961]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng;Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang. High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression[J]. APPLIED PHYSICS LETTERS,2018,113:161107. |
| APA | Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng;Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang.(2018).High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression.APPLIED PHYSICS LETTERS,113,161107. |
| MLA | Dongbo Wang; Jinchuan Zhang; Chuncai Hou; Yue Zhao; Fengmin Cheng;Xuefeng Jia; Shenqiang Zhai; Ning Zhuo; Junqi Liu; Fengqi Liu; Zhanguo Wang."High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression".APPLIED PHYSICS LETTERS 113(2018):161107. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。