Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant
文献类型：期刊论文
| 作者 | Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 113页码:251101 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28962]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang. Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant[J]. APPLIED PHYSICS LETTERS,2018,113:251101. |
| APA | Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang.(2018).Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant.APPLIED PHYSICS LETTERS,113,251101. |
| MLA | Dongbo Wang; Ning Zhuo; Yue Zhao; Fengmin Cheng; Shouzhu Niu; Jinchuan Zhang, Shenqiang Zhai, Lijun Wang; Shuman Liu; Fengqi Liu; Zhanguo Wang."Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant".APPLIED PHYSICS LETTERS 113(2018):251101. |
入库方式： OAI收割
来源：半导体研究所
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