Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope
文献类型：期刊论文
| 作者 | Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang |
| 刊名 | Journal of Nanoscience and Nanotechnology
 |
| 出版日期 | 2018 |
| 卷号 | 18页码:7468–7472 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29090]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang. Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope[J]. Journal of Nanoscience and Nanotechnology,2018,18:7468–7472. |
| APA | Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang.(2018).Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope.Journal of Nanoscience and Nanotechnology,18,7468–7472. |
| MLA | Xiantong Zheng ; Wei Huang ; Hongwei Liang ; Ping Wang ; Yu Liu ; Zhaoying Chen ; Ping Liang ; Mo Li ; Jian Zhang ; Yonghai Chen ; Xinqiang Wang."Investigation of InGaN Layer Grown Under In-Rich Condition by Reflectance Difference Spectroscopy Microscope".Journal of Nanoscience and Nanotechnology 18(2018):7468–7472. |
入库方式： OAI收割
来源：半导体研究所
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