Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
文献类型：期刊论文
| 作者 | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang |
| 刊名 | NANOSCIENCE AND NANOTECHNOLOGY LETTERS
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| 出版日期 | 2018 |
| 卷号 | 10期号:2页码:185-189 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29100]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer[J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS,2018,10(2):185-189. |
| APA | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang.(2018).Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer.NANOSCIENCE AND NANOTECHNOLOGY LETTERS,10(2),185-189. |
| MLA | Meilan Hao ; Quan Wang ; Lijuan Jiang ; Chun Feng ; Changxi Chen ; Cuimei Wang ; Hongling Xiao ; Fengqi Liu ; Xiangang Xu ; Xiaoliang Wang ; Zhanguo Wang."Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer".NANOSCIENCE AND NANOTECHNOLOGY LETTERS 10.2(2018):185-189. |
入库方式： OAI收割
来源：半导体研究所
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