中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

文献类型:期刊论文

作者Haining Chong ;   Zhewei Wang ;   Chaonan Chen ;   Zemin Xu ;   Ke Wu ;   Lan Wu ;   Bo Xu ;   Hui Ye
刊名Journal of Crystal Growth
出版日期2018
卷号488页码:8–15
源URL[http://ir.semi.ac.cn/handle/172111/29124]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Haining Chong ; Zhewei Wang ; Chaonan Chen ; Zemin Xu ; Ke Wu ; Lan Wu ; Bo Xu ; Hui Ye. Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers[J]. Journal of Crystal Growth,2018,488:8–15.
APA Haining Chong ; Zhewei Wang ; Chaonan Chen ; Zemin Xu ; Ke Wu ; Lan Wu ; Bo Xu ; Hui Ye.(2018).Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers.Journal of Crystal Growth,488,8–15.
MLA Haining Chong ; Zhewei Wang ; Chaonan Chen ; Zemin Xu ; Ke Wu ; Lan Wu ; Bo Xu ; Hui Ye."Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers".Journal of Crystal Growth 488(2018):8–15.

入库方式: OAI收割

来源:半导体研究所

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