AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique
文献类型：期刊论文
| 作者 | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang |
| 刊名 | Optics Communications
 |
| 出版日期 | 2018 |
| 卷号 | 413页码:54-57 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29136]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique[J]. Optics Communications,2018,413:54-57. |
| APA | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang.(2018).AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique.Optics Communications,413,54-57. |
| MLA | Qiufang Deng; Lu Guo; Song Liang ; Siwei Sun; Xiao Xie; Hongliang Zhu; Wei Wang."AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique".Optics Communications 413(2018):54-57. |
入库方式： OAI收割
来源：半导体研究所
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