Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices
文献类型：期刊论文
| 作者 | Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2018 |
| 卷号 | 123期号:5页码:053102 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29145]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan. Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices[J]. JOURNAL OF APPLIED PHYSICS,2018,123(5):053102. |
| APA | Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan.(2018).Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices.JOURNAL OF APPLIED PHYSICS,123(5),053102. |
| MLA | Zhibo Li; Mengqi Wang; Xin Fang; Yajie Li; Xuliang Zhou; Hongyan Yu; Pengfei Wang; Wei Wang; Jiaoqing Pan."Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices".JOURNAL OF APPLIED PHYSICS 123.5(2018):053102. |
入库方式： OAI收割
来源：半导体研究所
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