Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors
文献类型：期刊论文
| 作者 | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang |
| 刊名 | Chemistry of Materials
 |
| 出版日期 | 2018 |
| 卷号 | 30期号:11页码:3819-3826 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29156]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang. Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors[J]. Chemistry of Materials,2018,30(11):3819-3826. |
| APA | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang.(2018).Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors.Chemistry of Materials,30(11),3819-3826. |
| MLA | Denggui Wang; Junhua Meng; Xingwang Zhang; Gencai Guo; Zhigang Yin; Heng Liu; Likun Cheng; Menglei Gao; Jingbi You; Ruzhi Wang."Selective Direct Growth of Atomic Layered HfS 2 on Hexagonal Boron Nitride for High Performance Photodetectors".Chemistry of Materials 30.11(2018):3819-3826. |
入库方式： OAI收割
来源：半导体研究所
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