Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures
文献类型：期刊论文
| 作者 | Huang Huolin; Sun Zhonghao; Cao Yaqing; Li Feiyu; Zhang Feng; Wen Zhengxin; Zhang Zifeng; Liang Yung C.; Hu Lizhong |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 出版日期 | 2018 |
| 卷号 | 51期号:34页码:345102 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29168]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Huang Huolin;Sun Zhonghao;Cao Yaqing;Li Feiyu;Zhang Feng;Wen Zhengxin;Zhang Zifeng;Liang Yung C.;Hu Lizhong. Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures[J]. Journal of Physics D: Applied Physics,2018,51(34):345102. |
| APA | Huang Huolin;Sun Zhonghao;Cao Yaqing;Li Feiyu;Zhang Feng;Wen Zhengxin;Zhang Zifeng;Liang Yung C.;Hu Lizhong.(2018).Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures.Journal of Physics D: Applied Physics,51(34),345102. |
| MLA | Huang Huolin;Sun Zhonghao;Cao Yaqing;Li Feiyu;Zhang Feng;Wen Zhengxin;Zhang Zifeng;Liang Yung C.;Hu Lizhong."Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures".Journal of Physics D: Applied Physics 51.34(2018):345102. |
入库方式： OAI收割
来源：半导体研究所
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