LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method
文献类型：期刊论文
| 作者 | Guiying Shen; Youwen Zhao; Jingming Liu; Yongbiao Bai; Zhiyuan Dong; Hui Xie; Xiaoyu Chen |
| 刊名 | Journal of Electronic Materials
 |
| 出版日期 | 2018 |
| 卷号 | 47期号:9页码:4998-5001 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29172]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Guiying Shen;Youwen Zhao;Jingming Liu;Yongbiao Bai;Zhiyuan Dong;Hui Xie;Xiaoyu Chen. LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method[J]. Journal of Electronic Materials,2018,47(9):4998-5001. |
| APA | Guiying Shen;Youwen Zhao;Jingming Liu;Yongbiao Bai;Zhiyuan Dong;Hui Xie;Xiaoyu Chen.(2018).LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method.Journal of Electronic Materials,47(9),4998-5001. |
| MLA | Guiying Shen;Youwen Zhao;Jingming Liu;Yongbiao Bai;Zhiyuan Dong;Hui Xie;Xiaoyu Chen."LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method".Journal of Electronic Materials 47.9(2018):4998-5001. |
入库方式： OAI收割
来源：半导体研究所
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