Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers
文献类型：期刊论文
| 作者 | Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Yang Shaoyan; Wang Zhanguo |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2018 |
| 卷号 | 18期号:11页码:7446-7450 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29173]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Yang Shaoyan;Wang Zhanguo. Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7446-7450. |
| APA | Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Yang Shaoyan;Wang Zhanguo.(2018).Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7446-7450. |
| MLA | Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Yang Shaoyan;Wang Zhanguo."Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7446-7450. |
入库方式： OAI收割
来源：半导体研究所
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