Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang |
| 刊名 | Applied Physics A
 |
| 出版日期 | 2018 |
| 卷号 | 124期号:2页码:130 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29174]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang. Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy[J]. Applied Physics A,2018,124(2):130. |
| APA | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang.(2018).Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy.Applied Physics A,124(2),130. |
| MLA | Guijuan Zhao;Huijie Li;Lianshan Wang;Yulin Meng;Fangzheng Li;Hongyuan Wei;Shaoyan Yang;Zhanguo Wang."Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy".Applied Physics A 124.2(2018):130. |
入库方式： OAI收割
来源：半导体研究所
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