Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters
文献类型：期刊论文
| 作者 | Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2018 |
| 卷号 | 215期号:23页码:1800455 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29176]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo. Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2018,215(23):1800455. |
| APA | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo.(2018).Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,215(23),1800455. |
| MLA | Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo."Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215.23(2018):1800455. |
入库方式： OAI收割
来源：半导体研究所
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