The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Li Fangzheng; Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Chen Yanan; Yang Shaoyan; Jin Peng; Wang Zhanguo |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2018 |
| 卷号 | 18期号:11页码:7484-7488 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29178]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li Fangzheng;Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Chen Yanan;Yang Shaoyan;Jin Peng;Wang Zhanguo. The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7484-7488. |
| APA | Li Fangzheng;Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Chen Yanan;Yang Shaoyan;Jin Peng;Wang Zhanguo.(2018).The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7484-7488. |
| MLA | Li Fangzheng;Wang Lianshan;Zhao Guijuan;Meng Yulin;Li Huijie;Chen Yanan;Yang Shaoyan;Jin Peng;Wang Zhanguo."The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7484-7488. |
入库方式： OAI收割
来源：半导体研究所
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