Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions
文献类型：期刊论文
| 作者 | Congxin Xia; Juan Du; Meng Li; Xueping Li; Xu Zhao; Tianxing Wang; Jingbo Li |
| 刊名 | Physical Review Applied
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:5页码:054064 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29179]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li. Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions[J]. Physical Review Applied,2018,10(5):054064. |
| APA | Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li.(2018).Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions.Physical Review Applied,10(5),054064. |
| MLA | Congxin Xia;Juan Du;Meng Li;Xueping Li;Xu Zhao;Tianxing Wang;Jingbo Li."Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions".Physical Review Applied 10.5(2018):054064. |
入库方式： OAI收割
来源：半导体研究所
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