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Realizing fully spin polarized transport in graphene nanoribbons with design of van der Waals vertical heterostructure leads

文献类型：期刊论文

作者Tao, Xixi1,2; Jiang, Peng1,2; Kang, Lili1,2; Hao, Hua1,2; Song, Lingling3; Lan, Jie4; Zheng, Xiaohong1,2,5; Zhang, Lei5,6; Zeng, Zhi1,2
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2018-09-26
卷号51期号:38页码:7
关键词fully spin polarized transport stagger potential van der Waals vertical heterostructure zigzag graphene nanoribbon
ISSN号0022-3727
DOI10.1088/1361-6463/aad86f
通讯作者Zheng, Xiaohong(xhzheng@theory.issp.ac.cn)
英文摘要Zigzag-edged graphene and h-BN nanoribbons with passivated edges in the ground state are either spin-degenerate or spin-unpolarized systems, which are not directly applicable for spin-polarized transport. In this work, based on density functional calculations, we demonstrate that the combination of them to form van der Waals (vdW) heterostructures can be adopted to realize fully spin polarized transport. As an example, the ballistic transport properties of a zigzag-edged graphene nanoribbon (ZGNR) with six zigzag carbon chains is studied first with each lead as a vdW heterostructure formed by attaching a h-BN monolayer to each side of the ZGNR with AA-stacking. A greatly decreased transmission gap (0.28 eV) in one spin and a greatly increased transmission gap (0.82 eV) in the other spin is achieved in the transmission function, resulting in fully spin polarized transport at low bias. This arises from the stagger potential imposed by the h-BN layers, which not only exists in the leads, but also extends to the channel region. It changes the energy of the edge states of different spins localized at different sublattices in an opposite way in the whole device. The transmission gap and the threshold voltage can be further modulated by applying a vertical pressure to the vdW leads to tune the strength of the stagger potential or simply by changing the ribbon width. Finally, the increase of the channel length will greatly reduce the magnitude of the transmission around the Fermi level and the transmission gap will eventually recover the value of the band gap of the pristine ZGNR. These findings not only provide a novel way for achieving fully spin polarized transport in graphene, but also demonstrate the great importance of vdW heterostructures in the design of spintronic devices.
WOS关键词HALF-METALLICITY ; ELECTRONICS
资助项目National Natural Science Foundation of China[11574318] ; National Natural Science Foundation of China[11704232] ; National Natural Science Foundation of China[11374301] ; National Natural Science Foundation of China[21503061] ; National Natural Science Foundation of China[11647147] ; Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology[2016FXCX003] ; Shanxi Science and Technology Department[201701D121003] ; State Key Laboratory of Quantum Optics and Quantum Optics Devices[KF201810] ; National Key R&D Program of China[2017YFA0304203] ; National Key R&D Program of China[2016YFA0301700] ; Shanxi Province 100-Plan Talent Program
WOS研究方向Physics
语种英语
WOS记录号WOS:000442224100001
出版者IOP PUBLISHING LTD
资助机构National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology ; Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology ; Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology ; 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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/38115]  
专题合肥物质科学研究院_中科院固体物理研究所
通讯作者Zheng, Xiaohong
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
3.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
4.Jiangsu Normal Univ, Sch Phys & Elect Engn, Xuzhou 221116, Jiangsu, Peoples R China
5.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China
6.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
推荐引用方式
GB/T 7714		 Tao, Xixi,Jiang, Peng,Kang, Lili,et al. Realizing fully spin polarized transport in graphene nanoribbons with design of van der Waals vertical heterostructure leads[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(38):7.
APA Tao, Xixi.,Jiang, Peng.,Kang, Lili.,Hao, Hua.,Song, Lingling.,...&Zeng, Zhi.(2018).Realizing fully spin polarized transport in graphene nanoribbons with design of van der Waals vertical heterostructure leads.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(38),7.
MLA Tao, Xixi,et al."Realizing fully spin polarized transport in graphene nanoribbons with design of van der Waals vertical heterostructure leads".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.38(2018):7.

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来源：合肥物质科学研究院

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