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Pressure-Induced Metallization and Robust Superconductivity in Pristine 1T-SnSe2

文献类型：期刊论文

作者Zhou, Yonghui1; Zhang, Bowen1,2; Chen, Xuliang1; Gu, Chuanchuan1; An, Chao1,2; Zhou, Ying1,2; Cai, Kaiming3; Yuan, Yifang1,4,5; Chen, Chunhua1,2; Wu, Hao1,4,5
刊名ADVANCED ELECTRONIC MATERIALS
出版日期2018-08-01
卷号4期号:8页码:7
关键词metal dichalcogenides metallization pressure superconductivity synchrotron X-ray diffraction
ISSN号2199-160X
DOI10.1002/aelm.201800155
通讯作者Wang, Kaiyou(kywang@semi.ac.cn) ; Yang, Zhaorong(zryang@issp.ac.cn)
英文摘要Band engineering in layered metal dichalcogenides leads to a variety of physical phenomena and has obtained considerable attention recently. In this work, pressure-induced metallization and superconductivity in pristine 1T-SnSe2 is reported via electrical transport and synchrotron X-ray diffraction experiments. Electrical transport results show that the metallization emerges above 15.2 GPa followed by appearance of superconducting transition at 18.6 GPa. The superconductivity is robust with a nearly constant T-c approximate to 6.1 K between 30.1 and 50.3 GPa. High-pressure synchrotron X-ray diffraction experiments indicate that the 1T-SnSe2 phase maintains up to 46.0 GPa. Although the theoretical predicted structural transition and decomposition of SnSe2 into Sn3Se4 and Se are not detected, it is argued that the structural instability under high pressure might be crucial for the superconductivity. These findings demonstrate that 1T-SnSe2 is a very rare system from which superconductivity can be driven via multiple ways.
WOS关键词OPTICAL-PROPERTIES ; SINGLE-CRYSTALS ; SNSE2 ; STRAIN ; STATE ; CDI2
资助项目National Key Research and Development Program of China[2018YFA0305700] ; National Key Research and Development Program of China[2016YFA0401804] ; National Natural Science Foundation of China (NSFC)[11574323] ; National Natural Science Foundation of China (NSFC)[U1632275] ; National Natural Science Foundation of China (NSFC)[61774144] ; National Natural Science Foundation of China (NSFC)[11704387] ; Natural Science Foundation of Anhui Province[1708085QA19] ; Natural Science Foundation of Anhui Province[1808085MA06] ; Key Research Program of the Chinese Academy of Sciences[XDPB08-2] ; Key Research Program of the Chinese Academy of Sciences[XDPB06-3] ; Director's Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences[YZJJ201621] ; DOE-NNSA[DE-NA0001974] ; DOE-BES[DE-FG02-99ER45775] ; NSF ; DOE Office of Science[DE-AC02-06CH11357]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000441125200017
出版者WILEY
资助机构National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Key Research and Development Program of China ; National Natural Science Foundation of China (NSFC) ; National Natural Science Foundation of China (NSFC) ; 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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/37709]  
专题合肥物质科学研究院_中科院强磁场科学中心
通讯作者Wang, Kaiyou; Yang, Zhaorong
作者单位1.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Anhui, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
3.Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
4.Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Henan, Peoples R China
5.Zhengzhou Univ, Lab Mat Phys, Zhengzhou 450052, Henan, Peoples R China
6.Carnegie Inst Sci, Geophys Lab, HPCAT, Argonne, IL 60439 USA
7.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
8.Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China
9.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
10.Univ Chinese Acad Sci, Ctr Excellence Topol Quantum Computat, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Zhou, Yonghui,Zhang, Bowen,Chen, Xuliang,et al. Pressure-Induced Metallization and Robust Superconductivity in Pristine 1T-SnSe2[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(8):7.
APA Zhou, Yonghui.,Zhang, Bowen.,Chen, Xuliang.,Gu, Chuanchuan.,An, Chao.,...&Yang, Zhaorong.(2018).Pressure-Induced Metallization and Robust Superconductivity in Pristine 1T-SnSe2.ADVANCED ELECTRONIC MATERIALS,4(8),7.
MLA Zhou, Yonghui,et al."Pressure-Induced Metallization and Robust Superconductivity in Pristine 1T-SnSe2".ADVANCED ELECTRONIC MATERIALS 4.8(2018):7.

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