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Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible

文献类型：期刊论文

作者Bai, Xiaolong1,2; Ban, Boyuan1; Li, Jingwei1; Fu, Zhiqiang2; Peng, Zhijian2; Wang, Chengbiao2; Chen, Jian1
刊名SILICON
出版日期2018-07-01
卷号10期号:4页码:1283-1290
ISSN号1876-990X
关键词Segregation Al-Si alloy Directional solidification Apparent segregation coefficient
DOI10.1007/s12633-017-9602-5
通讯作者Chen, Jian(jchen@ipp.ac.cn)
英文摘要The distribution characteristic and segregation behavior of metal impurities during directional solidification of Al-20Si, Al-30Si and Al-40Si alloys have been investigated. The morphologies of the alloys and impurity phases were observed by optical microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The concentration profiles of representative metal impurities Al, Fe and Ti were measured by inductively coupled plasma optical emission spectrometry. The results indicate that the metal impurities segregate into the eutectic Al-Si melt during the growth of primary Si flakes and gradually segregate towards the top of each ingot during directional solidification. A concept of apparent segregation coefficient is proposed to characterize the segregation behavior of impurity elements. The apparent segregation coefficients of metal impurities decrease with increase in solidification temperature of the Al-Si alloys.
WOS关键词METALLURGICAL SILICON ; B REMOVAL ; P SYSTEM ; PURIFICATION ; MECHANISM ; PLASMA ; ALLOY ; IRON ; TI
资助项目Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; National Natural Science Foundation of China[51474201] ; National Natural Science Foundation of China[51404231] ; Anhui Provincial Natural Science Foundation[1508085QE81] ; CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows[2016LH0017] ; China Postdoctoral Science Foundation[2014M561846] ; CASHIPS Director's Funds[YYJJ201624] ; 100 Talent Program of Chinese Academy of Sciences[2012065]
WOS研究方向Chemistry ; Materials Science
语种英语
出版者SPRINGER
WOS记录号WOS:000435580700006
资助机构Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; Key Laboratory of Photovolatic and Energy Conservation Materials, Chinese Academy of Sciences ; 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源URL[http://ir.hfcas.ac.cn:8080/handle/334002/37298]  
专题合肥物质科学研究院_应用技术研究所
通讯作者Chen, Jian
作者单位1.Chinese Acad Sci, Key Lab Photovolat & Energy Conservat Mat, Inst Appl Technol, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China
2.China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714		 Bai, Xiaolong,Ban, Boyuan,Li, Jingwei,et al. Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible[J]. SILICON,2018,10(4):1283-1290.
APA Bai, Xiaolong.,Ban, Boyuan.,Li, Jingwei.,Fu, Zhiqiang.,Peng, Zhijian.,...&Chen, Jian.(2018).Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible.SILICON,10(4),1283-1290.
MLA Bai, Xiaolong,et al."Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible".SILICON 10.4(2018):1283-1290.

入库方式： OAI收割

来源：合肥物质科学研究院

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