中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects

文献类型:期刊论文

作者Xueping Li;  Guangrui Jia;  Juan Du;  Xiaohui Song;  Congxin Xia;  Zhongming Wei ;   Jingbo Li
刊名Journal of Materials Chemistry
出版日期2018
卷号6期号:37页码:10010-10019
源URL[http://ir.semi.ac.cn/handle/172111/29257]  
专题半导体研究所_半导体超晶格国家重点实验室
作者单位Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei and Jingbo Li
推荐引用方式
GB/T 7714
Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei ; Jingbo Li. Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects[J]. Journal of Materials Chemistry,2018,6(37):10010-10019.
APA Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei ; Jingbo Li.(2018).Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects.Journal of Materials Chemistry,6(37),10010-10019.
MLA Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei ; Jingbo Li."Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects".Journal of Materials Chemistry 6.37(2018):10010-10019.

入库方式: OAI收割

来源:半导体研究所

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