Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects
文献类型:期刊论文
作者 | Xueping Li; Guangrui Jia; Juan Du; Xiaohui Song; Congxin Xia; Zhongming Wei ; Jingbo Li |
刊名 | Journal of Materials Chemistry
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出版日期 | 2018 |
卷号 | 6期号:37页码:10010-10019 |
源URL | [http://ir.semi.ac.cn/handle/172111/29257] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
作者单位 | Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei and Jingbo Li |
推荐引用方式 GB/T 7714 | Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei ; Jingbo Li. Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects[J]. Journal of Materials Chemistry,2018,6(37):10010-10019. |
APA | Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei ; Jingbo Li.(2018).Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects.Journal of Materials Chemistry,6(37),10010-10019. |
MLA | Xueping Li;Guangrui Jia;Juan Du;Xiaohui Song;Congxin Xia;Zhongming Wei ; Jingbo Li."Type-II InSe/MoSe 2 (WSe 2 ) van der Waals heterostructures: vertical strain and electric field effects".Journal of Materials Chemistry 6.37(2018):10010-10019. |
入库方式: OAI收割
来源:半导体研究所
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