Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects
文献类型：期刊论文
| 作者 | Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia |
| 刊名 | Small
 |
| 出版日期 | 2018 |
| 卷号 | 14页码:1800365 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29256]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia. Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects[J]. Small,2018,14:1800365. |
| APA | Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia.(2018).Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects.Small,14,1800365. |
| MLA | Congxin Xia; Wenqi Xiong; Juan Du; Tianxing Wang; Yuting Peng; Zhongming Wei; Jingbo Li; Yu Jia."Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects".Small 14(2018):1800365. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。