中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

文献类型:期刊论文

作者Mianzeng Zhong;   Qinglin Xia;   Longfei Pan;   Yuqing Liu;   Yabin Chen;   Hui-Xiong Deng;   Jingbo Li;   Zhongming Wei
刊名Advanced Functional Materials
出版日期2018
卷号28期号:43页码:1802581
源URL[http://ir.semi.ac.cn/handle/172111/29007]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Mianzeng Zhong; Qinglin Xia; Longfei Pan; Yuqing Liu; Yabin Chen; Hui-Xiong Deng; Jingbo Li; Zhongming Wei. Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic[J]. Advanced Functional Materials,2018,28(43):1802581.
APA Mianzeng Zhong; Qinglin Xia; Longfei Pan; Yuqing Liu; Yabin Chen; Hui-Xiong Deng; Jingbo Li; Zhongming Wei.(2018).Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic.Advanced Functional Materials,28(43),1802581.
MLA Mianzeng Zhong; Qinglin Xia; Longfei Pan; Yuqing Liu; Yabin Chen; Hui-Xiong Deng; Jingbo Li; Zhongming Wei."Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic".Advanced Functional Materials 28.43(2018):1802581.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。