Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy
文献类型：期刊论文
| 作者 | Yabin Chen; Chaoyu Chen; Robert Kealhofer; Huili Liu; Zhiquan Yuan; Lili Jiang; Joonki Suh; Joonsuk Park; Changhyun Ko; Hwan Sung Choe; José Avila; Mianzeng Zhong; Zhongming Wei; Jingbo Li; Shushen Li; Hongjun Gao; Yunqi Liu; James Analytis; Qinglin Xia; Mari |
| 刊名 | Advanced Materials
 |
| 出版日期 | 2018 |
| 卷号 | 30期号:30页码:1800754 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29002]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yabin Chen; Chaoyu Chen; Robert Kealhofer; Huili Liu; Zhiquan Yuan; Lili Jiang;Joonki Suh; Joonsuk Park; Changhyun Ko; Hwan Sung Choe; José Avila; Mianzeng Zhong;Zhongming Wei; Jingbo Li; Shushen Li; Hongjun Gao; Yunqi Liu; James Analytis;Qinglin Xia; Mari. Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy[J]. Advanced Materials,2018,30(30):1800754. |
| APA | Yabin Chen; Chaoyu Chen; Robert Kealhofer; Huili Liu; Zhiquan Yuan; Lili Jiang;Joonki Suh; Joonsuk Park; Changhyun Ko; Hwan Sung Choe; José Avila; Mianzeng Zhong;Zhongming Wei; Jingbo Li; Shushen Li; Hongjun Gao; Yunqi Liu; James Analytis;Qinglin Xia; Mari.(2018).Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy.Advanced Materials,30(30),1800754. |
| MLA | Yabin Chen; Chaoyu Chen; Robert Kealhofer; Huili Liu; Zhiquan Yuan; Lili Jiang;Joonki Suh; Joonsuk Park; Changhyun Ko; Hwan Sung Choe; José Avila; Mianzeng Zhong;Zhongming Wei; Jingbo Li; Shushen Li; Hongjun Gao; Yunqi Liu; James Analytis;Qinglin Xia; Mari."Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy".Advanced Materials 30.30(2018):1800754. |
入库方式： OAI收割
来源：半导体研究所
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