Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations
文献类型：期刊论文
| 作者 | Jixuan Wu ; Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2018 |
| 卷号 | 11期号:5页码:054001 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29246]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Jixuan Wu ;Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang. Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations[J]. APPLIED PHYSICS EXPRESS,2018,11(5):054001. |
| APA | Jixuan Wu ;Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang.(2018).Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations.APPLIED PHYSICS EXPRESS,11(5),054001. |
| MLA | Jixuan Wu ;Zhiqiang Fan ; Jiezhi Chen; Xiangwei Jiang."Atomic defects in monolayer WSe 2 tunneling FETs studied by systematic ab initio calculations".APPLIED PHYSICS EXPRESS 11.5(2018):054001. |
入库方式： OAI收割
来源：半导体研究所
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