Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers
文献类型：期刊论文
| 作者 | Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:47页码:22196-22202 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29204]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei. Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers[J]. NANOSCALE,2018,10(47):22196-22202. |
| APA | Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei.(2018).Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers.NANOSCALE,10(47),22196-22202. |
| MLA | Longfei Pan; Le Huang; Mianzeng Zhong; Xiang-Wei Jiang; Hui-Xiong Deng; Jingbo Li; Jian-Bai Xia ; Zhongming Wei."Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers".NANOSCALE 10.47(2018):22196-22202. |
入库方式： OAI收割
来源：半导体研究所
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