Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers
文献类型：期刊论文
| 作者 | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:39页码:18492–18501 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28991]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen. Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers[J]. NANOSCALE,2018,10(39):18492–18501. |
| APA | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen.(2018).Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers.NANOSCALE,10(39),18492–18501. |
| MLA | Tong Li ; Rui Shen; Mei Sun; Dong Pan; Jingmin Zhang; Jun Xu; Jianhua Zhao ; Qing Chen."Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2 O 3 /HfO 2 layers".NANOSCALE 10.39(2018):18492–18501. |
入库方式： OAI收割
来源：半导体研究所
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