Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects
文献类型：期刊论文
| 作者 | Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2018 |
| 卷号 | 20期号:8页码:5699-5707 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29202]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2018,20(8):5699-5707. |
| APA | Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang.(2018).Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,20(8),5699-5707. |
| MLA | Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang."Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 20.8(2018):5699-5707. |
入库方式： OAI收割
来源：半导体研究所
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