中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects

文献类型:期刊论文

作者Juan Lu;   Zhi-Qiang Fan;   Jian Gong;   Jie-Zhi Chen;   Huhe ManduLa;   Yan-Yang Zhang;   Shen-Yuan Yang Xiang-Wei Jiang
刊名PHYSICAL CHEMISTRY CHEMICAL PHYSICS
出版日期2018
卷号20期号:8页码:5699-5707
语种英语
源URL[http://ir.semi.ac.cn/handle/172111/29202]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2018,20(8):5699-5707.
APA Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang.(2018).Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,20(8),5699-5707.
MLA Juan Lu; Zhi-Qiang Fan; Jian Gong; Jie-Zhi Chen; Huhe ManduLa; Yan-Yang Zhang; Shen-Yuan Yang Xiang-Wei Jiang."Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 20.8(2018):5699-5707.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。