Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”
文献类型：期刊论文
| 作者 | Hui-Xiong Deng;Su-Huai Wei |
| 刊名 | Physical Review Letters
 |
| 出版日期 | 2018 |
| 卷号 | 120期号:3页码:039601 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29196]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hui-Xiong Deng;Su-Huai Wei. Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”[J]. Physical Review Letters,2018,120(3):039601. |
| APA | Hui-Xiong Deng;Su-Huai Wei.(2018).Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”.Physical Review Letters,120(3),039601. |
| MLA | Hui-Xiong Deng;Su-Huai Wei."Comment on “Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors”".Physical Review Letters 120.3(2018):039601. |
入库方式： OAI收割
来源：半导体研究所
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