Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors
文献类型：期刊论文
| 作者 | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 18期号:10页码:6611-6616 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28982]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang. Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors[J]. NANO LETTERS,2018,18(10):6611-6616. |
| APA | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang.(2018).Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors.NANO LETTERS,18(10),6611-6616. |
| MLA | Fangyuan Yang; Zuocheng Zhang; Nai Zhou Wang; Guo Jun Ye; Wenkai Lou; Xiaoying Zhou; Kenji Watanabe; Takashi Taniguchi; Kai Chang; Xian Hui Chen; Yuanbo Zhang."Quantum Hall Effect in Electron-Doped Black Phosphorus Field- Effect Transistors".NANO LETTERS 18.10(2018):6611-6616. |
入库方式： OAI收割
来源：半导体研究所
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