Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode
文献类型：期刊论文
| 作者 | Gao Wei; Zheng Zhaoqiang; Li Yongtao; Xia Congxin; Du Juan; Zhao Yu; Li Jingbo |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2018 |
| 卷号 | 6期号:46页码:12433–12760 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29135]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Gao Wei;Zheng Zhaoqiang;Li Yongtao;Xia Congxin;Du Juan;Zhao Yu;Li Jingbo. Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(46):12433–12760. |
| APA | Gao Wei;Zheng Zhaoqiang;Li Yongtao;Xia Congxin;Du Juan;Zhao Yu;Li Jingbo.(2018).Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode.JOURNAL OF MATERIALS CHEMISTRY C,6(46),12433–12760. |
| MLA | Gao Wei;Zheng Zhaoqiang;Li Yongtao;Xia Congxin;Du Juan;Zhao Yu;Li Jingbo."Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode".JOURNAL OF MATERIALS CHEMISTRY C 6.46(2018):12433–12760. |
入库方式： OAI收割
来源：半导体研究所
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