中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of a high performance ZnIn 2 S 4 /Si heterostructure photodetector array for weak signal detection

文献类型:期刊论文

作者Zhaoqiang Zheng;  Jiandong Yao;  Weijia Li;  Le Huang;  Ye Xiao;  Zhongfei Mu;  Guowei Yang;  Jingbo Li
刊名Journal of Materials Chemistry C
出版日期2018
卷号6期号:47页码:12928-12939
源URL[http://ir.semi.ac.cn/handle/172111/29181]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Zhaoqiang Zheng;Jiandong Yao;Weijia Li;Le Huang;Ye Xiao;Zhongfei Mu;Guowei Yang;Jingbo Li. Fabrication of a high performance ZnIn 2 S 4 /Si heterostructure photodetector array for weak signal detection[J]. Journal of Materials Chemistry C,2018,6(47):12928-12939.
APA Zhaoqiang Zheng;Jiandong Yao;Weijia Li;Le Huang;Ye Xiao;Zhongfei Mu;Guowei Yang;Jingbo Li.(2018).Fabrication of a high performance ZnIn 2 S 4 /Si heterostructure photodetector array for weak signal detection.Journal of Materials Chemistry C,6(47),12928-12939.
MLA Zhaoqiang Zheng;Jiandong Yao;Weijia Li;Le Huang;Ye Xiao;Zhongfei Mu;Guowei Yang;Jingbo Li."Fabrication of a high performance ZnIn 2 S 4 /Si heterostructure photodetector array for weak signal detection".Journal of Materials Chemistry C 6.47(2018):12928-12939.

入库方式: OAI收割

来源:半导体研究所

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