Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides
文献类型：期刊论文
| 作者 | Congxin Xia; Wenqi Xiong; Wenbo Xiao; Juan Du; Lizhen Fang; Jingbo Li; Yu Jia |
| 刊名 | Physical Review Applied
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:2页码:024028 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29180]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Congxin Xia;Wenqi Xiong;Wenbo Xiao;Juan Du;Lizhen Fang;Jingbo Li;Yu Jia. Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides[J]. Physical Review Applied,2018,10(2):024028. |
| APA | Congxin Xia;Wenqi Xiong;Wenbo Xiao;Juan Du;Lizhen Fang;Jingbo Li;Yu Jia.(2018).Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides.Physical Review Applied,10(2),024028. |
| MLA | Congxin Xia;Wenqi Xiong;Wenbo Xiao;Juan Du;Lizhen Fang;Jingbo Li;Yu Jia."Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides".Physical Review Applied 10.2(2018):024028. |
入库方式： OAI收割
来源：半导体研究所
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