Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes
文献类型：期刊论文
| 作者 | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu |
| 刊名 | Advanced Materials Interfaces
 |
| 出版日期 | 2018 |
| 卷号 | 5期号:18页码:1800662 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28912]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu. Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes[J]. Advanced Materials Interfaces,2018,5(18):1800662. |
| APA | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu.(2018).Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes.Advanced Materials Interfaces,5(18),1800662. |
| MLA | Qiucheng Li; Qingqing Wu; Jing Gao; Tongbo Wei; Jingyu Sun; Hao Hong; Zhipeng Dou; Zhepeng Zhang; Mark H. Rümmeli; Peng Gao; Jianchang Yan; Junxi Wang; Jinmin Li; Yanfeng Zhang; Zhongfan Liu."Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes".Advanced Materials Interfaces 5.18(2018):1800662. |
入库方式： OAI收割
来源：半导体研究所
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