中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate

文献类型:期刊论文

作者Shaoteng Wu;   Liancheng Wang;   Zhiqiang Liu;   Xiaoyan Yi;   Yang Huang;   Chao Yang;   Tongbo Wei;   Jianchang Yan;   Guodong Yuan;   Junxi Wang ;   Jinmin Li
刊名Nanoscale
出版日期2018
卷号10期号:13页码:5888-5896
语种英语
源URL[http://ir.semi.ac.cn/handle/172111/28911]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Shaoteng Wu; Liancheng Wang; Zhiqiang Liu; Xiaoyan Yi; Yang Huang; Chao Yang; Tongbo Wei; Jianchang Yan; Guodong Yuan; Junxi Wang ; Jinmin Li. Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate[J]. Nanoscale,2018,10(13):5888-5896.
APA Shaoteng Wu; Liancheng Wang; Zhiqiang Liu; Xiaoyan Yi; Yang Huang; Chao Yang; Tongbo Wei; Jianchang Yan; Guodong Yuan; Junxi Wang ; Jinmin Li.(2018).Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate.Nanoscale,10(13),5888-5896.
MLA Shaoteng Wu; Liancheng Wang; Zhiqiang Liu; Xiaoyan Yi; Yang Huang; Chao Yang; Tongbo Wei; Jianchang Yan; Guodong Yuan; Junxi Wang ; Jinmin Li."Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate".Nanoscale 10.13(2018):5888-5896.

入库方式: OAI收割

来源:半导体研究所

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