InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
文献类型：期刊论文
| 作者 | Gao FB; Chen NF(陈诺夫) ; Liu L; Zhang XW; Wu JL; Yin ZG
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2007 |
| 卷号 | 304期号:2页码:472-475 |
| 通讯作者邮箱 | fbgao@semi.ac.cn |
| 关键词 | Crystal Structure Liquid-Phase Epitaxy Semiconducting Iii-V Materials Molecular-Beam Epitaxy Transport-Properties Inas1-Xsbx Alloys Inassb Insb Gap Photoluminescence Inasxsb1-X/Gaas Superlattices |
| ISSN号 | 0022-0248 |
| 通讯作者 | Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. |
| 中文摘要 | The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | MOLECULAR-BEAM EPITAXY ; TRANSPORT-PROPERTIES ; INAS1-XSBX ; ALLOYS ; INASSB ; INSB ; GAP ; PHOTOLUMINESCENCE ; INASXSB1-X/GAAS ; SUPERLATTICES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000247419600030 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33953]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Gao FB,Chen NF,Liu L,et al. InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy[J]. Journal of Crystal Growth,2007,304(2):472-475. |
| APA | Gao FB,陈诺夫,Liu L,Zhang XW,Wu JL,&Yin ZG.(2007).InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy.Journal of Crystal Growth,304(2),472-475. |
| MLA | Gao FB,et al."InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy".Journal of Crystal Growth 304.2(2007):472-475. |
入库方式： OAI收割
来源：力学研究所
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