Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target
文献类型：期刊论文
| 作者 | Sun, J; Wu, AM; Xu, N; Ying, ZF; Shen, XK; Dong, ZB; Wu, JD; Shi, LQ |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
 |
| 出版日期 | 2005-11-01 |
| 卷号 | 23页码:1633-1637 |
| ISSN号 | 0734-2101 |
| DOI | 10.1116/1.2091093 |
| 英文摘要 | Using reactive pulsed laser deposition assisted by electron cyclotron resonance (ECR) plasma, we have synthesized GaN thin films from a polycrystalline GaAs target at low temperatures. This was achieved by ablating the GaAs target in the reactive environment of a nitrogen plasma generated from ECR microwave discharge in pure nitrogen gas and depositing the films with concurrent bombardment by the low-energy nitrogen plasma stream. High-energy ion backscattering spectroscopy analysis shows that the synthesized films are gallium rich. Characterizations by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy confirm the presence of GaN bonds in the films. The recorded absorption spectrum also reveals GaN stretching mode characteristic of the hexagonal GaN phase. The synthesized GaN films are transparent in the visible region and have a band gap of 3.38 eV. Optical emission from the plume during film deposition reveals that the plume created by pulsed laser ablation of the GaAs target consists mainly of monoatomic atoms and ions of gallium and arsenic. Mechanisms responsible for the formation of GaN molecules and the growth of GaN films are also discussed. (c) 2005 American Vacuum Society. |
| WOS关键词 | III-V NITRIDE ; GAN FILMS ; GROWTH |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000233395800023 |
| 出版者 | A V S AMER INST PHYSICS |
| 源URL | [http://119.78.100.186/handle/113462/25055]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wu, JD |
| 作者单位 | 1.Fudan Univ, Dept Opt Sci & Engn, State Key Lab Adv Photon Mat & Devices, Shanghai 200433, Peoples R China 2.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, J,Wu, AM,Xu, N,et al. Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2005,23:1633-1637. |
| APA | Sun, J.,Wu, AM.,Xu, N.,Ying, ZF.,Shen, XK.,...&Shi, LQ.(2005).Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,23,1633-1637. |
| MLA | Sun, J,et al."Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 23(2005):1633-1637. |
入库方式： OAI收割
来源：近代物理研究所
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