中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma

文献类型:期刊论文

作者Zhu, XD; Arefi-Khonsari, F; Petit-Etienne, C; Tatoulian, M
刊名PLASMA PROCESSES AND POLYMERS
出版日期2005-06-14
卷号2页码:407-413
关键词atmospheric pressure filamentary discharges hexamethyldisiloxane (HMDSO) plasma-assisted chemical vapor deposition (PACVD) silicon oxide
ISSN号1612-8850
DOI10.1002/ppap.200400049
英文摘要A line-shaped atmospheric pressure filamentary plasma is developed to carry out the open air deposition of silicon oxide films from N-2/hexamethyldisoxane (HMDSO) mixtures with/without adding oxygen. FT-IR, XPS, SEM, and ellipsometry were used to analyse the samples. It is found that the deposited films present mainly inorganic characteristics even without an oxygen admixture in the open air system. Smooth, continuous, and uniform films can be formed at relatively low monomer content. By increasing the monomer content for a fixed power density or oxygen in the input gases, the deposition rates increase and then show a plateau, suggesting that there exists saturation values for the deposition rates corresponding to the monomer and oxygen content. By the comparison of films deposited in the open air device and in a controlled nitrogen atmosphere in the same device, the important role of the oxygen in the open air reactor has been shown. This study exhibits a potential of open air deposition at atmospheric pressure to form SiO2 films for large-scale deposition.
WOS关键词GLOW-DISCHARGE ; SIO2 FILM
WOS研究方向Physics ; Polymer Science
语种英语
WOS记录号WOS:000230385400005
出版者WILEY-V C H VERLAG GMBH
源URL[http://119.78.100.186/handle/113462/25485]  
专题中国科学院近代物理研究所
通讯作者Zhu, XD
作者单位1.Univ Paris 06, ENSCP, Lab Genie Procedes Plasmas & Traitement Surfaces, F-75005 Paris, France
2.Univ Sci & Technol China, Chinese Acad Sci, Dept Modern Phys, Key Lab Basic Plasma Phys, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714
Zhu, XD,Arefi-Khonsari, F,Petit-Etienne, C,et al. Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma[J]. PLASMA PROCESSES AND POLYMERS,2005,2:407-413.
APA Zhu, XD,Arefi-Khonsari, F,Petit-Etienne, C,&Tatoulian, M.(2005).Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma.PLASMA PROCESSES AND POLYMERS,2,407-413.
MLA Zhu, XD,et al."Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma".PLASMA PROCESSES AND POLYMERS 2(2005):407-413.

入库方式: OAI收割

来源:近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。