Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma
文献类型:期刊论文
作者 | Zhu, XD; Arefi-Khonsari, F; Petit-Etienne, C; Tatoulian, M |
刊名 | PLASMA PROCESSES AND POLYMERS
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出版日期 | 2005-06-14 |
卷号 | 2页码:407-413 |
关键词 | atmospheric pressure filamentary discharges hexamethyldisiloxane (HMDSO) plasma-assisted chemical vapor deposition (PACVD) silicon oxide |
ISSN号 | 1612-8850 |
DOI | 10.1002/ppap.200400049 |
英文摘要 | A line-shaped atmospheric pressure filamentary plasma is developed to carry out the open air deposition of silicon oxide films from N-2/hexamethyldisoxane (HMDSO) mixtures with/without adding oxygen. FT-IR, XPS, SEM, and ellipsometry were used to analyse the samples. It is found that the deposited films present mainly inorganic characteristics even without an oxygen admixture in the open air system. Smooth, continuous, and uniform films can be formed at relatively low monomer content. By increasing the monomer content for a fixed power density or oxygen in the input gases, the deposition rates increase and then show a plateau, suggesting that there exists saturation values for the deposition rates corresponding to the monomer and oxygen content. By the comparison of films deposited in the open air device and in a controlled nitrogen atmosphere in the same device, the important role of the oxygen in the open air reactor has been shown. This study exhibits a potential of open air deposition at atmospheric pressure to form SiO2 films for large-scale deposition. |
WOS关键词 | GLOW-DISCHARGE ; SIO2 FILM |
WOS研究方向 | Physics ; Polymer Science |
语种 | 英语 |
WOS记录号 | WOS:000230385400005 |
出版者 | WILEY-V C H VERLAG GMBH |
源URL | [http://119.78.100.186/handle/113462/25485] ![]() |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Zhu, XD |
作者单位 | 1.Univ Paris 06, ENSCP, Lab Genie Procedes Plasmas & Traitement Surfaces, F-75005 Paris, France 2.Univ Sci & Technol China, Chinese Acad Sci, Dept Modern Phys, Key Lab Basic Plasma Phys, Hefei 230026, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Zhu, XD,Arefi-Khonsari, F,Petit-Etienne, C,et al. Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma[J]. PLASMA PROCESSES AND POLYMERS,2005,2:407-413. |
APA | Zhu, XD,Arefi-Khonsari, F,Petit-Etienne, C,&Tatoulian, M.(2005).Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma.PLASMA PROCESSES AND POLYMERS,2,407-413. |
MLA | Zhu, XD,et al."Open air deposition of SiO2 films by an atmospheric pressure line-shaped plasma".PLASMA PROCESSES AND POLYMERS 2(2005):407-413. |
入库方式: OAI收割
来源:近代物理研究所
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