Evidence for enhanced desorption of hydrogen atoms from a Si(100) surface induced by slow highly-charged ions
文献类型：期刊论文
| 作者 | Deiwiks, J.; Schiwietz, G.; Bhattacharyya, S. R.; Xiao, G.; Hippler, R. |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2006-08-01 |
| 卷号 | 248页码:253-258 |
| 关键词 | desorption hydrogen highly-charged ions xenon electronic sputtering |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2006.04.069 |
| 英文摘要 | We report evidence for an enhanced desorption of hydrogen atoms from a Si(1 0 0) surface bombarded by 30 keV Xeq+ (q = 6-22) ions. The measured desorption yield amounts to 0.76 and 2.2 hydrogen atoms per incident Xe10+ and Xe18+ ion, respectively. For understanding the behaviour of hydrogen desorption from Si, another experiment was carried out to see the hydrogen signals as a function of time for about 140 min after deliberately introducing hydrogen into the target chamber and then shut off the valve. The results are discussed in the light of potential sputtering which essentially dominates for ions at higher charge states and the interpretation is supported by theoretical estimates. (c) 2006 Elsevier B.V. All rights reserved. |
| WOS关键词 | MULTICHARGED IONS ; ABOVE-SURFACE ; EMISSION ; DYNAMICS ; SILICON ; TARGET |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000239264900005 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://119.78.100.186/handle/113462/26347]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Bhattacharyya, S. R. |
| 作者单位 | 1.Ernst Moritz Arndt Univ Greifswald, Inst Phys, D-17487 Greifswald, Germany 2.Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deiwiks, J.,Schiwietz, G.,Bhattacharyya, S. R.,et al. Evidence for enhanced desorption of hydrogen atoms from a Si(100) surface induced by slow highly-charged ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2006,248:253-258. |
| APA | Deiwiks, J.,Schiwietz, G.,Bhattacharyya, S. R.,Xiao, G.,&Hippler, R..(2006).Evidence for enhanced desorption of hydrogen atoms from a Si(100) surface induced by slow highly-charged ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,248,253-258. |
| MLA | Deiwiks, J.,et al."Evidence for enhanced desorption of hydrogen atoms from a Si(100) surface induced by slow highly-charged ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 248(2006):253-258. |
入库方式： OAI收割
来源：近代物理研究所
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