Effect of O-2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma
文献类型：期刊论文
| 作者 | Wei Yong-Xia; Qian Xiao-Mei; Yu Xiao-Zhu; Ye Chao; Ning Zhao-Yuan; Liang Rong-Qing |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2007-02-01 |
| 卷号 | 56页码:1172-1176 |
| 关键词 | SiCOH films O-2-doping dielectric property bonding configuration |
| ISSN号 | 1000-3290 |
| 英文摘要 | Carbon-doping oxide materials (SiCOH films) with k of 2.62 are prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from the mixture of decamethylcyclopentasioxane (D5) and oxygen (O-2). This paper investigates the effect of O-2-doping on bonding configuration, dielectric property and leakage current of the SiCOH low dielectric constant films. The results show that the leakage current can be reduced obviously on the premise that dielectric constant k is kept at a lower value by small O-2-doping amount. For the SiCOH film deposited under O-2 flow of 3 cm(3)/min, the dielectric constant k as low as 2.62 and leakage current of 8.2 x 10(-9) A/Cm-2 can be obtained. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; LOW-K FILMS ; DIELECTRIC-PROPERTIES ; DIETHOXYMETHYLSILANE ; OXYGEN |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000243986600092 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/27189]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wei Yong-Xia |
| 作者单位 | 1.Soochow Univ, Key Lab Thin Films, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China 2.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei Yong-Xia,Qian Xiao-Mei,Yu Xiao-Zhu,et al. Effect of O-2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma[J]. ACTA PHYSICA SINICA,2007,56:1172-1176. |
| APA | Wei Yong-Xia,Qian Xiao-Mei,Yu Xiao-Zhu,Ye Chao,Ning Zhao-Yuan,&Liang Rong-Qing.(2007).Effect of O-2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma.ACTA PHYSICA SINICA,56,1172-1176. |
| MLA | Wei Yong-Xia,et al."Effect of O-2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma".ACTA PHYSICA SINICA 56(2007):1172-1176. |
入库方式： OAI收割
来源：近代物理研究所
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