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Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C(fp)

文献类型：期刊论文

作者Wembe Tafo Evariste1,2; Su Hong1; Gao Yanni1; Wu Ming1
刊名NUCLEAR SCIENCE AND TECHNIQUES
出版日期2008-08-20
卷号19页码:241-245
关键词Charge sensitive preamplifier CMOS transistor Feedback capacitor Simulation
ISSN号1001-8042
英文摘要In this paper, to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors, the CMOS FET is implemented as a feedback capacitor C(fp), so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit, the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns, the output resistance less than 94 Omega and the linearity almost good.
资助项目Third World Academy of Sciences ; Institute of Modem Physics ; Chinese Academy of Sciences ; NSFC[10675153]
WOS研究方向Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000260475800009
出版者ELSEVIER SCIENCE BV
资助机构Third World Academy of Sciences ; Institute of Modem Physics ; Chinese Academy of Sciences ; NSFC
源URL[http://119.78.100.186/handle/113462/29197]  
专题中国科学院近代物理研究所
通讯作者Su Hong
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Univ Douala, Dept Phys, Douala, Cameroon
推荐引用方式
GB/T 7714		 Wembe Tafo Evariste,Su Hong,Gao Yanni,et al. Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C(fp)[J]. NUCLEAR SCIENCE AND TECHNIQUES,2008,19:241-245.
APA Wembe Tafo Evariste,Su Hong,Gao Yanni,&Wu Ming.(2008).Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C(fp).NUCLEAR SCIENCE AND TECHNIQUES,19,241-245.
MLA Wembe Tafo Evariste,et al."Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C(fp)".NUCLEAR SCIENCE AND TECHNIQUES 19(2008):241-245.

入库方式： OAI收割

来源：近代物理研究所

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