Room temperature ferromagnetism of Fe-implanted ZnO film
文献类型：期刊论文
| 作者 | Zhang, B.1; Li, Q. H.2; Shi, L. Q.1; Cheng, H. S.1; Wang, J. Z.1 |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
 |
| 出版日期 | 2008-11-01 |
| 卷号 | 26页码:1469-1473 |
| 关键词 | Curie temperature ferromagnetic materials ion implantation magnetic hysteresis magnetic thin films Raman spectra semiconductor thin films semimagnetic semiconductors X-ray diffraction zinc compounds |
| ISSN号 | 0734-2101 |
| DOI | 10.1116/1.2990855 |
| 英文摘要 | The ZnO-based diluted magnetic semiconductors (DMSs) with room temperature ferromagnetism were achieved by ion implantation. Fe(+) ions at 80 keV with doses ranging from 1x10(16) to 8x10(16) cm(-2) were implanted into n-type ZnO films at room temperature. Subsequently, the samples were annealed at 700 degrees C for 1 h in air ambient. The Fe-implanted content was determined by proton induced x-ray emission. The magnetic property was measured by the Quantum Design MPMS superconducting quantum interference device magnetometer. No trace of secondary phases or clusters was observed within the sensitivity of x-ray diffraction. Raman spectrum showed that the Fe ions replaced Zn atoms and incorporated into the crystal lattice positions of ZnO. Apparent ferromagnetic hysteresis loops measured at 300 K were observed, and the temperature-dependent magnetization showed that their Curie temperature exceeded room temperature. |
| WOS关键词 | DILUTED MAGNETIC SEMICONDUCTORS ; PIXE ANALYSIS ; OXIDE ; MODEL |
| 资助项目 | National Natural Science Foundation of China[10775033] ; Fund of Fudan University ; Shanghai Leading Academic[B107] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000260777100014 |
| 出版者 | A V S AMER INST PHYSICS |
| 资助机构 | National Natural Science Foundation of China ; Fund of Fudan University ; Shanghai Leading Academic |
| 源URL | [http://119.78.100.186/handle/113462/29418]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, B. |
| 作者单位 | 1.Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China 2.Tokyo Univ Sci, Dept Appl Chem, Res Ctr Green Photosci & Technol, Tokyo 1628601, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, B.,Li, Q. H.,Shi, L. Q.,et al. Room temperature ferromagnetism of Fe-implanted ZnO film[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2008,26:1469-1473. |
| APA | Zhang, B.,Li, Q. H.,Shi, L. Q.,Cheng, H. S.,&Wang, J. Z..(2008).Room temperature ferromagnetism of Fe-implanted ZnO film.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,26,1469-1473. |
| MLA | Zhang, B.,et al."Room temperature ferromagnetism of Fe-implanted ZnO film".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26(2008):1469-1473. |
入库方式： OAI收割
来源：近代物理研究所
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