中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 近代物理研究所
  3. 中国科学院近代物理研究所
Burnout current density of bismuth nanowires

文献类型：期刊论文

作者Cornelius, T. W.1; Picht, O.1; Mueller, S.1; Neumann, R.1; Voelklein, F.2; Karim, S.3; Duan, J. L.4
刊名JOURNAL OF APPLIED PHYSICS
出版日期2008-05-15
卷号103页码:5
ISSN号0021-8979
DOI10.1063/1.2927443
英文摘要Single bismuth nanowires with diameters ranging from 100 nm to 1 mu m were electrochemically deposited in ion track-etched single-pore polycarbonate membranes. The maximum current density the wires are able to carry was investigated by ramping up the current until failure occurred. It increases by three to four orders of magnitude for nanowires embedded in the template compared to bulk bismuth and rises with diminishing diameter. Simulations show that the wires are heated up electrically to the melting temperature. Since the surface-to-volume ratio rises with diminishing diameter, thinner wires dissipate the heat more efficiently to the surrounding polymer matrix and, thus, can tolerate larger current densities. (C) 2008 American Institute of Physics.
WOS关键词BI NANOWIRES ; FILMS ; ELECTROMIGRATION ; CONDUCTIVITY ; RESISTIVITY ; FABRICATION ; TRANSPORT
WOS研究方向Physics
语种英语
WOS记录号WOS:000256303800073
出版者AMER INST PHYSICS
源URL[http://119.78.100.186/handle/113462/29872]  
专题中国科学院近代物理研究所
通讯作者Cornelius, T. W.
作者单位1.Gesellschaft Schwerionenforsch GSI, D-64291 Darmstadt, Germany
2.Univ Appl Sci Wiesbaden, Inst Microtechnol, D-65428 Russelsheim, Germany
3.Univ Marburg, Dept Chem, D-35032 Marburg, Germany
4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Cornelius, T. W.,Picht, O.,Mueller, S.,et al. Burnout current density of bismuth nanowires[J]. JOURNAL OF APPLIED PHYSICS,2008,103:5.
APA Cornelius, T. W..,Picht, O..,Mueller, S..,Neumann, R..,Voelklein, F..,...&Duan, J. L..(2008).Burnout current density of bismuth nanowires.JOURNAL OF APPLIED PHYSICS,103,5.
MLA Cornelius, T. W.,et al."Burnout current density of bismuth nanowires".JOURNAL OF APPLIED PHYSICS 103(2008):5.

入库方式： OAI收割

来源：近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。