中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Shape prediction of two-dimensional adatom islands on crystal surfaces during homoepitaxial growth

文献类型:期刊论文

作者Yin, Cong1,2; Ning, Xi-Jing1,2; Zhuang, Jun3; Xie, Yi-Qun3; Gong, Xiu-Fang1,2; Ye, Xiang-Xi1,2; Ming, Chen1,2; Jin, Yun-Fei1,2
刊名APPLIED PHYSICS LETTERS
出版日期2009-05-04
卷号94页码:3
ISSN号0003-6951
关键词ab initio calculations adsorbed layers epitaxial growth island structure surface potential
DOI10.1063/1.3130091
英文摘要A dynamic model based on surface interaction potentials is established to predict the geometric structure of two-dimensional (2D) adatom islands on surfaces formed at temperatures for general epitaxial growth. The prediction based on the model is independent of the number of atoms in the island and can be implemented easily by ab initio calculations. Predictions of the homoepitaxial 2D islands on Pt(111), Ag(111), and Cu(111) surfaces are in good agreement with relevant experimental observations.
WOS关键词EMBEDDED-ATOM METHOD ; PT(111) ; MORPHOLOGY ; METALS ; MODEL
资助项目National Nature Science Foundaof China[10574030]
WOS研究方向Physics
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000265933700051
资助机构National Nature Science Foundaof China
源URL[http://119.78.100.186/handle/113462/31044]  
专题中国科学院近代物理研究所
通讯作者Ning, Xi-Jing
作者单位1.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
2.Fudan Univ, Appl Ion Beam Phys Lab, Key Lab, Minist Educ, Shanghai 200433, Peoples R China
3.Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
推荐引用方式
GB/T 7714
Yin, Cong,Ning, Xi-Jing,Zhuang, Jun,et al. Shape prediction of two-dimensional adatom islands on crystal surfaces during homoepitaxial growth[J]. APPLIED PHYSICS LETTERS,2009,94:3.
APA Yin, Cong.,Ning, Xi-Jing.,Zhuang, Jun.,Xie, Yi-Qun.,Gong, Xiu-Fang.,...&Jin, Yun-Fei.(2009).Shape prediction of two-dimensional adatom islands on crystal surfaces during homoepitaxial growth.APPLIED PHYSICS LETTERS,94,3.
MLA Yin, Cong,et al."Shape prediction of two-dimensional adatom islands on crystal surfaces during homoepitaxial growth".APPLIED PHYSICS LETTERS 94(2009):3.

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来源:近代物理研究所

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