p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation
文献类型：期刊论文
| 作者 | Zhang, Shuyu1; Liang, Rongqing2; Ou, Qiongrong2; Wu, Xiaojing3; Jiang, Meifu4; Nie, Zongfu1; Liu, Feng2; Chang, Xijiang2; Wang, Yipeng3; Du, Jilong4 |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 12页码:H329-H332 |
| 关键词 | aluminium annealing doping profiles electrical resistivity hole density hole mobility II-VI semiconductors nitrogen plasma immersion ion implantation semiconductor doping semiconductor thin films sputter deposition vacancies (crystal) wide band gap semiconductors zinc compounds |
| ISSN号 | 1099-0062 |
| DOI | 10.1149/1.3156835 |
| 英文摘要 | p-Type Al-N co-doped ZnO[ZnO:(Al,N)] thin films are successfully fabricated by plasma immersion ion implantation technique assisted with co-doping method. Hole concentration, resistivity, and mobility of the optimum p-type ZnO:(Al,N) film obtained are 2.89x10(17) cm(-3), 6.87 cm, and 3.15 cm(2) V(-1) s(-1), respectively. O(*) plays an important role in the reactions of plasma for its production of N atoms. Implanted N atoms are activated by postannealing, occupy oxygen vacancies (V(O)), and form nitrogen substitutions (N(O)) at O sites. |
| WOS关键词 | NITROGEN ; TEMPERATURE ; DEPENDENCE ; PHYSICS |
| 资助项目 | National Natural Science Foundation of China[10775034] ; Shanghai Leading Academic Discipline[B113] |
| WOS研究方向 | Electrochemistry ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000268064500025 |
| 出版者 | ELECTROCHEMICAL SOC INC |
| 资助机构 | National Natural Science Foundation of China ; Shanghai Leading Academic Discipline |
| 源URL | [http://119.78.100.186/handle/113462/31329]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, Shuyu |
| 作者单位 | 1.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Illuminating Engn & Light Sources, Shanghai 200433, Peoples R China 3.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China 4.Soochow Univ, Dept Phys Sci & Technol, Prov Key Lab Thin Films, Suzhou 215006, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Shuyu,Liang, Rongqing,Ou, Qiongrong,et al. p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2009,12:H329-H332. |
| APA | Zhang, Shuyu.,Liang, Rongqing.,Ou, Qiongrong.,Wu, Xiaojing.,Jiang, Meifu.,...&Xin, Qianqian.(2009).p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation.ELECTROCHEMICAL AND SOLID STATE LETTERS,12,H329-H332. |
| MLA | Zhang, Shuyu,et al."p-Type Conversion of ZnO Thin Films by Plasma Immersion Ion Implantation".ELECTROCHEMICAL AND SOLID STATE LETTERS 12(2009):H329-H332. |
入库方式： OAI收割
来源：近代物理研究所
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