Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma
文献类型：期刊论文
| 作者 | Ke Bo; Wang Lei; Ni Tian-Ling; Ding Fang; Chen Mu-Di; Zhou Hai-Yang; Wen Xiao-Hui; Zhu Xiao-Dong |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-02-01 |
| 卷号 | 59页码:1338-1343 |
| 关键词 | electron cyclotron resonance-radio frequency dual hybrid plasma radio-frequency bias silicon oxide films |
| ISSN号 | 1000-3290 |
| 英文摘要 | Silicon oxide films were deposited in electron cyclotron resonance-radio frequency dual hybrid plasmas using a mixture of HMDSO and oxygen as source gases, and optical emission spectroscopy was employed to investigate the gas phase species in the plasma. It is found that both the deposition rate and the chemical bonds of films are significantly affected by the radio frequency bias. The deposition rate is slightly increased when a low direct current self-bias is applied, and is reduced with the increasing self-bias due to strengthened ion bombardment. The ratios of O to Si in the films deposited under the bias frequency of 400 kHz are above 2:1, nearly the same as that under 13.56 MHz. However, the content of carbon under 400 kHz bias is much higher than that under 13.56 MHz. The reason is that the application of the high frequency bias of 13.56 MHz not only strengthens ion bombardment on the material surface, but also induces the variations of the bulk plasmas including the increase of O atom density, while the main effect of the bias of 400 kHz is only to strengthen ion bombardment. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION |
| 资助项目 | National Natural Science Foundation of China[10635010] ; National Basic Research Program of China[2008CB717800] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000274699000097 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; National Basic Research Program of China |
| 源URL | [http://119.78.100.186/handle/113462/31823]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhu Xiao-Dong |
| 作者单位 | Univ Sci & Technol China, Chinese Acad Sci, Dept Modern Phys, Key Lab Basic Plasma Phys, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ke Bo,Wang Lei,Ni Tian-Ling,et al. Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma[J]. ACTA PHYSICA SINICA,2010,59:1338-1343. |
| APA | Ke Bo.,Wang Lei.,Ni Tian-Ling.,Ding Fang.,Chen Mu-Di.,...&Zhu Xiao-Dong.(2010).Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma.ACTA PHYSICA SINICA,59,1338-1343. |
| MLA | Ke Bo,et al."Effects of radio-frequency bias on silicon oxide films deposited by dual electron cyclotron resonance-radio frequency hybrid plasma".ACTA PHYSICA SINICA 59(2010):1338-1343. |
入库方式： OAI收割
来源：近代物理研究所
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