Leakage current characteristics of Bi3.15Nd0.85Ti3-xZrxO12 thin films
文献类型：期刊论文
| 作者 | Zhong, X. L.1,2,3; Liao, H.1,2,3; Hu, Z. S.1; Li, B.1,2,3; Wang, J. B.1,2,3 |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2010-12-15 |
| 卷号 | 64页码:2644-2647 |
| ISSN号 | 0167-577X |
| 关键词 | Ferroelectrics Thin films Chemical solution deposition |
| DOI | 10.1016/j.matlet.2010.08.043 |
| 英文摘要 | Thin films of Bi3.15Nd0.85Ti3O12 (BNT) and Bi3.15Nd0.85Ti3-xZrxO12 (BNTZ(x,) x = 0.1 and 0.2) were fabricated on Pt/TiO2/SiO2/Si(100) substrates by a chemical solution deposition (CSD) technique at 700 degrees C. Structures, surface morphologies, leakage current characteristics and Curie temperature of the films were studied as a function of Zr ion content by X-ray diffraction, atomic force microscopy, ferroelectric test system and thermal analysis, respectively. Experimental results indicate that Zr ion substitution in the BNT film markedly decreases the leakage current of the film, while almost not changing the Curie temperature of the film, which is at about 420-460 degrees C. The decrease of the leakage current in BNTZ(x) films is that the conduction by the electron hopping between Ti4+ and Ti3+ ions is depressed because Zr4+ ions can block the path between two adjacent Ti ions and enlarge hopping distance. (C) 2010 Elsevier B.V. All rights reserved. |
| WOS关键词 | FERROELECTRIC PROPERTIES ; BI4TI3O12 ; SUBSTITUTION ; PERMITTIVITY ; DEPOSITION |
| 资助项目 | National Natural Science Foundation of China[10802072] ; National Natural Science Foundation of China[50702048] ; National Natural Science Foundation of China[11072208] ; National Natural Science Foundation of China[10732100] ; Hunan Provincial Natural Science Foundation of China[09JJ1006] ; Hunan Provincial Natural Science Foundation of China[09JJ7004] ; Program for New Century Excellent Talents in University[NCET-08-0687] ; Specialized Research Fund for the Doctoral Program of Higher Education[200805301020] ; Specialized Research Fund for the Doctoral Program of Higher Education[20070530010] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000283968900024 |
| 资助机构 | National Natural Science Foundation of China ; Hunan Provincial Natural Science Foundation of China ; Program for New Century Excellent Talents in University ; Specialized Research Fund for the Doctoral Program of Higher Education |
| 源URL | [http://119.78.100.186/handle/113462/31910]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhong, X. L. |
| 作者单位 | 1.Xiangtan Univ, Inst Modern Phys, Xiangtan 411105, Peoples R China 2.Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China 3.Kaifeng Univ, Fac Informat Engn, Kaifeng 475004, Henan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhong, X. L.,Liao, H.,Hu, Z. S.,et al. Leakage current characteristics of Bi3.15Nd0.85Ti3-xZrxO12 thin films[J]. MATERIALS LETTERS,2010,64:2644-2647. |
| APA | Zhong, X. L.,Liao, H.,Hu, Z. S.,Li, B.,&Wang, J. B..(2010).Leakage current characteristics of Bi3.15Nd0.85Ti3-xZrxO12 thin films.MATERIALS LETTERS,64,2644-2647. |
| MLA | Zhong, X. L.,et al."Leakage current characteristics of Bi3.15Nd0.85Ti3-xZrxO12 thin films".MATERIALS LETTERS 64(2010):2644-2647. |
入库方式： OAI收割
来源：近代物理研究所
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