Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process
文献类型：期刊论文
| 作者 | Li Hai-Xia1 ; Li Zhan-Kui1; Wang Fang-Cong2; Wang Zhu-Sheng1; Wang Xiu-Hua1; Li Chun-Yan1
|
| 刊名 | CHINESE PHYSICS C
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 35页码:635-637 |
| 关键词 | nuclear radiation detector two-step annealing reverse body resistance |
| ISSN号 | 1674-1137 |
| DOI | 10.1088/1674-1137/35/7/007 |
| 英文摘要 | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved. |
| WOS关键词 | ION-IMPLANTATION ; DAMAGE |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000292429500007 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/33342]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li Hai-Xia |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Hai-Xia,Li Zhan-Kui,Wang Fang-Cong,et al. Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process[J]. CHINESE PHYSICS C,2011,35:635-637. |
| APA | Li Hai-Xia,Li Zhan-Kui,Wang Fang-Cong,Wang Zhu-Sheng,Wang Xiu-Hua,&Li Chun-Yan.(2011).Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process.CHINESE PHYSICS C,35,635-637. |
| MLA | Li Hai-Xia,et al."Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process".CHINESE PHYSICS C 35(2011):635-637. |
入库方式： OAI收割
来源：近代物理研究所
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