Contributions of N+, N-2(+), NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films
文献类型：期刊论文
| 作者 | Li, Zebin1; Liang, Rongqing1,2; Ou, Qiongrong1,2; Zhang, Shuyu3,4; He, Long1; Chang, Xijiang1; Wu, Xiaojing5; Wu, Zhonghang1; He, Zhijiang1; Gao, Huanzhong1 |
| 刊名 | IEEE TRANSACTIONS ON PLASMA SCIENCE
 |
| 出版日期 | 2011-02-01 |
| 卷号 | 39页码:711-716 |
| 关键词 | N-Al codoping plasma immersion ion implantation (PIII) p-type ZnO |
| ISSN号 | 0093-3813 |
| DOI | 10.1109/TPS.2010.2093541 |
| 英文摘要 | Different nitrogen sources, pure N-2, pure NO, and NO mixed with O-2 (25% NO + 75% O-2), are used to confirm the effects of N+, N-2(+), and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of N-2, NO, and NO mixed with O-2, the major implanted ions are, respectively, N-2(+) ions, N-2(+) mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, N-2(+), and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(N-O)], nitrogen molecule substitutions at O sites [(N-2)(O)], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only N-O contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with O-2, while others still remain n-type conductivity. The mechanism of p-type conversion by N-2, NO, and NO mixed O-2 PIII was investigated in this paper. |
| WOS关键词 | ACCEPTOR PAIR LUMINESCENCE ; THIN-FILMS ; OPTICAL-PROPERTIES ; NITROGEN ; PLASMA ; DEPENDENCE ; GAS |
| 资助项目 | National Natural Science Foundation of China[10975037] ; Shanghai Leading Academic Discipline Project[B113] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000287088000012 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 资助机构 | National Natural Science Foundation of China ; Shanghai Leading Academic Discipline Project |
| 源URL | [http://119.78.100.186/handle/113462/34445]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, Zebin |
| 作者单位 | 1.Fudan Univ, Dept Illuminating Engn & Light Sources, Shanghai 200433, Peoples R China 2.Minist Educ, Engn Res Ctr Adv Lighting Technol, Shanghai 200433, Peoples R China 3.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China 4.Univ St Andrews, Sch Phys & Astron, Organ Semicond Optoelect Grp, St Andrews KY16 9SS, Fife, Scotland 5.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Zebin,Liang, Rongqing,Ou, Qiongrong,et al. Contributions of N+, N-2(+), NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE,2011,39:711-716. |
| APA | Li, Zebin.,Liang, Rongqing.,Ou, Qiongrong.,Zhang, Shuyu.,He, Long.,...&Gao, Huanzhong.(2011).Contributions of N+, N-2(+), NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films.IEEE TRANSACTIONS ON PLASMA SCIENCE,39,711-716. |
| MLA | Li, Zebin,et al."Contributions of N+, N-2(+), NO+ Ion Implantation to p-Type Conversion of ZnO:Al Films".IEEE TRANSACTIONS ON PLASMA SCIENCE 39(2011):711-716. |
入库方式： OAI收割
来源：近代物理研究所
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